Guofu Niu's CryoElectronics Class
- Lecture 1, Introduction and overview of low-temperature electronics
- Lecture 2 and 3, Band theory, DOS, EF, De-ionization and their T dependence
- Lecture 4 Carrier Freeze Out and carrier density vs T
- Homework 1
- Fermi Integral and Heavy Doping Effects
- Lecture 6 Homework solution, Fermi Potential, Built-in potential, ionization in transition region at low T
- Freezeout with band bending
- homework no. 2
- Carrier motion updated with continuity equations and recombination
- Low T minority carrier diffusion
- PN junction and bipolar transistor operation
- bipolar Jc T dependence and BGR circuits
- homework 2 solutions, compensation effect on freezeout, minority carrier trapping by compensation dopants
- more bipolars
- charge storage and high frequency issues including HW3
- bipolar transistor modeling and T dependence modeling
- device projects
- mosfet essentials
- General charge control vcb 0V
- BSIM I-V modeling fundamentals
- Quasi static charge modeling basics
- Benchmark tests for model quality assurance
- Radiation effects
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